Силовой модуль IGBT SEMIX452GB176HDS

15098,00 

Описание

IGBT MODULE, 2X1700V; Transistor Type:IGBT Module; Transistor Polarity:N Channel; Voltage, Vces:1700V; Current, Ic Continuous a Max:430A; Voltage, Vce Sat Max:2.45V; Case Style:SEMiX 2s; Termination Type:Screw; Current, Ic av:430A; Current, Icm Pulsed:600A; Current, Ifs Max:2000A; Time, Rise:105ns; Voltage, Vceo:1.2V; Voltage, Vrrm:1700V