Силовой модуль IGBT BSM25GD120DN2BOSA1

5154,00 

Описание

IGBT MODULE, 1200V, ECONOPACK3; Transistor Type:IGBT Module; Voltage, Vces:1200V; Current, Ic Continuous a Max:25A; Voltage, Vce Sat Max:3V; Power Dissipation:200W; Case Style:Econopack 2; Termination Type:Solder; Current, Icm Pulsed:50A; Power, Pd:200W; Temperature, Current:80 C; Temperature, Full Power Rating:25 C; Transistors, No. of:6; Voltage, Vce Sat Typ:2.5V; Voltage, Vceo:1200V