Силовой модуль IGBT SEMIX402GB066HDS

9589,00 

Описание

IGBT MODULE, 2X600V; Transistor Type:IGBT Module; Transistor Polarity:N Channel; Voltage, Vces:600V; Current, Ic Continuous a Max:530A; Voltage, Vce Sat Max:1.9V; Case Style:SEMiX 2s; Termination Type:Screw; Current, Ic av:530A; Current, Icm Pulsed:800A; Current, Ifs Max:1800A; Time, Rise:125ns; Voltage, Vceo:1V; Voltage, Vrrm:1600V