Силовой модуль IGBT SKM200GB176D

IGBT MODULE, DUAL, 1700V
Transistor Type IGBT
Transistor Polarity N
Voltage, Vces 1700V
Current Ic Continuous a Max 260A
Voltage, Vce Sat Max 2.45V
Case Style SEMITRANS 3
Collector-to-Emitter Breakdown Voltage 1700V
Current Ic Continuous b Max 180A
Current Ic av 260A
Current, Icm Pulsed 210A
External Depth 61.4mm
Fixing Centres 93mm
Fixing Hole Diameter 5.4mm
SMD Marking SEMITRANS 3
Temperature, Current 25 C
Time, Rise 140ns
Transistors, No. of 2
Width, External 105mm
Voltage 1700V